Recent Progress in EUV Metal Oxide Photoresists

Kazuki Kasahara; Hong Xu; Vasiliki Kosma; Jeremy Odent; Emmanuel P. Giannelis; Christopher K. Ober

doi:10.2494/photopolymer.30.93

Kazuki Kasahara, Hong Xu, Vasiliki Kosma, Jeremy Odent, Emmanuel P. Giannelis, Christopher K. Ober

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Keywords: EUV lithography, EUV photoresist, Nanoparticle photoresist, Metal organic cluster, Metal oxide

JOURNAL FREE ACCESS

2017 Volume 30 Issue 1 Pages 93-97

DOI https://doi.org/10.2494/photopolymer.30.93

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Abstract

EUV lithography is a promising candidate for the manufacturing of semiconductor devices for the 7 nm node and beyond. The success of any lithography depends on the availability of a suitable resist with high resolution, sensitivity and low LWR. Though polymer type CAR (chemically amplified resist) is the current standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. To meet this target, metal oxide photoresists have been designed and lithographic properties have been studied. In this paper, scum elimination studies with dissolution rate acceleration concepts and new metal core applications are described.

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