According to the SIA roadmap, by the year of 2006, minimum feature size of 70nm on wafer is required. Research in U.S., Japan and Europe is aimed at developing and demonstrating an EUVL Tool for critical feature size of 70nm and below. In Japan, Himeji Institute of Technology (HIT) have developed an EUVL Laboratory Tool, which has a practical exposure field of 30mmx28mm. The alignment and assembly of 3-aspherical mirror optics was completed. A final wave front error of less than 3nm was achieved. Using this system, exposure experiments are performed using synchrotron facility of New Subaru. Up to now, 56nm patterns have been replicated in the exposure field of 10mm x 1mm.