Sara Fiore^1*, Mathieu Luisier^1*, Fabian Ducry^1*, Cedric Klinkert^1*, Jonathan Backman^1*

1 Integrated System Laboratory, ETH Zurich, Switzerland

* Corresponding authors emails: safiore@iis.ee.ethz.ch, mluisier@iis.ee.ethz.ch, fabian.ducry@iis.ee.ethz.ch, cedrick@iis.ee.ethz.ch, jbackman@iis.ee.ethz.ch

DOI10.24435/materialscloud:7f-5t [version v1]

Publication date: Dec 08, 2021

How to cite this record

Sara Fiore, Mathieu Luisier, Fabian Ducry, Cedric Klinkert, Jonathan Backman, Influence of the hBN dielectric layers on the quantum transport properties of MoS2 transistors., Materials Cloud Archive 2021.215 (2021), https://doi.org/10.24435/materialscloud:7f-5t

Description

An ab initio study of the coupled electrons and phonon transport properties of MoS2-hBN devices. A comparison of the device characteristics when hBN is treated as a perfectly insulating, non vibrating layer and one where it is included in the DFT together with MoS2.

Materials Cloud sections using this data

Files

File name	Size	Description
Quantum_transport_oxide.zip MD5md5:d0df72b89e8eab874325fae35c83e7b2	37.8 MiB	input files for DFT calculation and quantum transport

License

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External references

Keywords

Quantum transport ab initio thermal properties