The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range

Durmuş Ali Aldemir; Ali Kökce; Ahmet Faruk Özdemir

doi:10.16984/saufenbilder.279996

Research Article

The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range

Year 2017, Volume: 21 Issue: 6, 1286 - 1292, 01.12.2017

Durmuş Ali Aldemir Ali Kökce Ahmet Faruk Özdemir

https://doi.org/10.16984/saufenbilder.279996

Cited By: 10

Abstract

The
current-voltage (I-V) data of Ni/n-GaAs Schottky diodes with 50 nm Schottky metal thickness has been
measured in the temperature range of 60 K to 320 K. The important contact
parameters of Ni/n-GaAs Schottky
diodes have been obtained by using conventional I-V method, Norde method,
generalized Norde method, and Cheung functions for each temperature. Then, the
results have been compared each other.

Keywords

Schottky Diode, Conventional I-V Method, Cheung Method, Norde Method, Generalized Norde Method, temperature dependence

References

E.H. Rhoderick and R.H. Williams, Metal–Semiconductor Contacts. Oxford : Oxford University Press, 1988.
S.M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
H. Norde, "A modified forward I-V plot for Schottky diodes with high series resistance," Journal of Applied Physics, vol. 50, no. 7, pp. 5052-5053, 1979.
K.E Bohlin, "Generalized Norde plot including determination of the ideality factor," Journal of Applied Physics, vol. 60, no. 3, pp. 1223-1224, 1986.
J.H. Werner, "Schottky barrier and pn-junction I/V plots-Small signal evaluation," Applied Physics A, vol. 47, no. 3, pp. 291-300, 1988.
K. Sato and Y. Yasamura, "Study of forward I-V plot for Schottky diodes with high series resistance," Journal of Applied Physics, vol. 58, no. 9, pp. 3655-3657, 1985.
C.D. Lien, F.C.T. So, and M.A. Nicolet, "An improved I-V method for non-ideal Schottky diodes with high series resistance," IEEE Transactions on Electron Devices, vol. ED-31, pp. 1502-1503, 1984.
S.K. Cheung and N.W. Cheung, "Extraction of Schottky diode parameters from forward current-voltage characteristics," Solid-State Electronics, vol. 49, no. 2, pp. 85-87, 1986.
E. Ayyıldız et al., "Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer," Solid-State Electronics, vol. 39, no. 1, pp. 83-87, 1996.
M.K. Hudait and S.B. Krupanidhi, "Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures," Physica B Condensed Matter, vol. 307, no. 1-4, pp. 125-137, 2001.
M.K. Hudait, P. Venkateswarlu, and S.B. Krupanidhi, "Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures," Solid-State Electronics, vol. 45, no. 1, pp. 133-141, 2001.
S. Zhu et al., "Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction, ," Solid-State Electronics, vol. 44, no. 10, pp. 1807-1818, 2000.
D.A. Aldemir, A. Kökce, and A.F. Özdemir, "Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes," Microelectronic Engineering, vol. 98, pp. 6-11, 2012.
Ö. Güllü, M. Çankaya, M. Biber, and A. Türüt, "Gamma irradiation-induced changes at the electrical characteristics of organic-based Schottky structures," Journal of Physics D: Applied Physics, vol. 41, no. 13, p. 135103(7 pp), 2008.

Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması

Year 2017, Volume: 21 Issue: 6, 1286 - 1292, 01.12.2017

Durmuş Ali Aldemir Ali Kökce Ahmet Faruk Özdemir

https://doi.org/10.16984/saufenbilder.279996

Cited By: 10

Abstract

50 nm Schottky kontak kalınlığına sahip Ni/n-GaAs Schottky diyotlarının
akım-gerilim (I-V) verileri 60 K’den 320 K’e kadar olan geniş bir sıcaklık
aralığında ölçüldü. Ni/n-GaAs
Schottky diyotlarının önemli kontak parametreleri geleneksel I-V
metodu, Norde metodu, genelleştirilmiş Norde metodu ve Cheung fonksiyonları
kullanılarak her bir sıcaklık değeri için ayrı ayrı elde edildi. Daha sonra
sonuçlar birbirleriyle kıyaslandı.

Keywords

Schottky Diyot, Geleneksel I-V metot, Cheung metot, Norde Metot, Genelleştirilmiş Norde Metot, Sıcaklık Bağlılığı

References

E.H. Rhoderick and R.H. Williams, Metal–Semiconductor Contacts. Oxford : Oxford University Press, 1988.
S.M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
H. Norde, "A modified forward I-V plot for Schottky diodes with high series resistance," Journal of Applied Physics, vol. 50, no. 7, pp. 5052-5053, 1979.
K.E Bohlin, "Generalized Norde plot including determination of the ideality factor," Journal of Applied Physics, vol. 60, no. 3, pp. 1223-1224, 1986.
J.H. Werner, "Schottky barrier and pn-junction I/V plots-Small signal evaluation," Applied Physics A, vol. 47, no. 3, pp. 291-300, 1988.
K. Sato and Y. Yasamura, "Study of forward I-V plot for Schottky diodes with high series resistance," Journal of Applied Physics, vol. 58, no. 9, pp. 3655-3657, 1985.
C.D. Lien, F.C.T. So, and M.A. Nicolet, "An improved I-V method for non-ideal Schottky diodes with high series resistance," IEEE Transactions on Electron Devices, vol. ED-31, pp. 1502-1503, 1984.
S.K. Cheung and N.W. Cheung, "Extraction of Schottky diode parameters from forward current-voltage characteristics," Solid-State Electronics, vol. 49, no. 2, pp. 85-87, 1986.
E. Ayyıldız et al., "Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer," Solid-State Electronics, vol. 39, no. 1, pp. 83-87, 1996.
M.K. Hudait and S.B. Krupanidhi, "Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures," Physica B Condensed Matter, vol. 307, no. 1-4, pp. 125-137, 2001.
M.K. Hudait, P. Venkateswarlu, and S.B. Krupanidhi, "Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures," Solid-State Electronics, vol. 45, no. 1, pp. 133-141, 2001.
S. Zhu et al., "Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction, ," Solid-State Electronics, vol. 44, no. 10, pp. 1807-1818, 2000.
D.A. Aldemir, A. Kökce, and A.F. Özdemir, "Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes," Microelectronic Engineering, vol. 98, pp. 6-11, 2012.
Ö. Güllü, M. Çankaya, M. Biber, and A. Türüt, "Gamma irradiation-induced changes at the electrical characteristics of organic-based Schottky structures," Journal of Physics D: Applied Physics, vol. 41, no. 13, p. 135103(7 pp), 2008.

There are 14 citations in total.

Details

Subjects	Metrology, Applied and Industrial Physics
Journal Section	Research Articles
Authors	Durmuş Ali Aldemir Ali Kökce This is me Ahmet Faruk Özdemir
Publication Date	December 1, 2017
Submission Date	December 21, 2016
Acceptance Date	July 24, 2017
Published in Issue	Year 2017 Volume: 21 Issue: 6

Cite

APA	Aldemir, D. A., Kökce, A., & Özdemir, A. F. (2017). The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range. Sakarya University Journal of Science, 21(6), 1286-1292. https://doi.org/10.16984/saufenbilder.279996
AMA	Aldemir DA, Kökce A, Özdemir AF. The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range. SAUJS. December 2017;21(6):1286-1292. doi:10.16984/saufenbilder.279996
Chicago	Aldemir, Durmuş Ali, Ali Kökce, and Ahmet Faruk Özdemir. “The Comparison of the Methods Used for Determining of Schottky Diode Parameters in a Wide Temperature Range”. Sakarya University Journal of Science 21, no. 6 (December 2017): 1286-92. https://doi.org/10.16984/saufenbilder.279996.
EndNote	Aldemir DA, Kökce A, Özdemir AF (December 1, 2017) The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range. Sakarya University Journal of Science 21 6 1286–1292.
IEEE	D. A. Aldemir, A. Kökce, and A. F. Özdemir, “The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range”, SAUJS, vol. 21, no. 6, pp. 1286–1292, 2017, doi: 10.16984/saufenbilder.279996.
ISNAD	Aldemir, Durmuş Ali et al. “The Comparison of the Methods Used for Determining of Schottky Diode Parameters in a Wide Temperature Range”. Sakarya University Journal of Science 21/6 (December 2017), 1286-1292. https://doi.org/10.16984/saufenbilder.279996.
JAMA	Aldemir DA, Kökce A, Özdemir AF. The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range. SAUJS. 2017;21:1286–1292.
MLA	Aldemir, Durmuş Ali et al. “The Comparison of the Methods Used for Determining of Schottky Diode Parameters in a Wide Temperature Range”. Sakarya University Journal of Science, vol. 21, no. 6, 2017, pp. 1286-92, doi:10.16984/saufenbilder.279996.
Vancouver	Aldemir DA, Kökce A, Özdemir AF. The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range. SAUJS. 2017;21(6):1286-92.