LETTER
A signal degradation reduction method for memristor ratioed logic (MRL) gates
Keywords:
full adder,
memristor ratioed logic (MRL) gate
2015 Volume 12 Issue 8 Pages 20150062
Details
2015 Volume 12 Issue 8 Pages 20150062
This paper presents a design strategy of eliminating signal degradation for memristor ratioed logic (MRL) gates. Based on the strategy, a novel MRL-based one-bit full adder is proposed. The inverters in circuit can effectively eliminate the degradation and restore signal integrity. To evaluate the effectiveness of the proposed one-bit full adder, an eight-bit full adder is demonstrated as a study case. Compared to the previous MRL-based standard cell design, the proposed circuit can reduce 11.1% memristor cells, 22.2% CMOS transistors, 38.9% vias, 58% power. Compared to the previous MRL-based optimized design, the proposed design can reduce 11.1% memristor cells, 12.5% CMOS transistors, 98.1% power, 98.1% energy.
