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The dot size effect of amorphous silicon quantum dot on 1.54-μm Er luminescence

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The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other ones. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er.

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Acknowledgments

This work was supported by the Ministry of Information and Communication in Korea. Authors of Los Alamos National Laboratory thank the technical staff of the Ion Beam Materials Lab for their assistance.

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Authors and Affiliations

  1. Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, 305-350, Korea

    Nae-Man Park, Tae-Youb Kim & Gun Yong Sung

  2. Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju, 500-712, Korea

    Baek-Hyun Kim & Seong-Ju Park

  3. Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Korea

    Kwan Sik Cho & Jung H. Shin

  4. Materials Science & Technology Division, Los Alamos National Laboratory, NM, 87545, USA

    Jung-Kun Lee & Michael Nastasi

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  1. Nae-Man Park
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  2. Tae-Youb Kim
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  3. Gun Yong Sung
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  4. Baek-Hyun Kim
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  5. Seong-Ju Park
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  6. Kwan Sik Cho
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  7. Jung H. Shin
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  9. Michael Nastasi
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Correspondence to Nae-Man Park.

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Park, NM., Kim, TY., Sung, G.Y. et al. The dot size effect of amorphous silicon quantum dot on 1.54-μm Er luminescence. MRS Online Proceedings Library 817, 31–36 (2004). https://doi.org/10.1557/PROC-817-L1.4

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  • DOI: https://doi.org/10.1557/PROC-817-L1.4

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