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Hydrogenated Amorphous Silicon Thin-Film Deposition by Direct Photo-Enhanced Decomposition of Silane Using an Internal Hydrogen Discharge Lamp

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Abstract

Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Å/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

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Authors and Affiliations

  1. Engineering Department, Cambridge University, Trumpington Street, Cambridge, CB2 1PZ, England

    P. A. Robertson & W. I. Milne

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  1. P. A. Robertson
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  2. W. I. Milne
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Robertson, P.A., Milne, W.I. Hydrogenated Amorphous Silicon Thin-Film Deposition by Direct Photo-Enhanced Decomposition of Silane Using an Internal Hydrogen Discharge Lamp. MRS Online Proceedings Library 70, 31–35 (1986). https://doi.org/10.1557/PROC-70-31

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  • DOI: https://doi.org/10.1557/PROC-70-31

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