Abstract
Resistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.
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References
L.O. Chua, “Memristor - the missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, 507–519, 1971.
D.B. Strukov, G. Snider, D.R. Stewart, and R.S. Williams, “The missing memristor found ”, Nature 453, pp. 80–83, 2008.
J. Yang, F. Miao, M. Pickett, D. Ohlberg, D.R. Stewart, C. Lau, and R.S. Williams, “The mechanism of electroforming of metal oxide memristive switches,” Nanotechnology, vol. 20, no. 21, 2009.
S. Larentis, F. Nardi, S. Balatti, D. C. Gilmer, and D. Ielmini, “Resistive switching by voltage-driven ion migration in bipolar RRAM─ Part II: Modeling ”, IEEE Trans. Electron Devices, vol. 59, pp. 2468–2475 2012.
S. Harada, K. Tanaka, and H. Inui, “Thermoelectric properties and crystallographic shear structures in titanium oxides of the Magneli phases,” J. Appl. Phy., vol. 108, no. 8, 2010.
D.B. Strukov, F. Alibart, and R.S. Williams, “Thermophoresis/diffusion as the plausible mechanism for unipolar resistive switching in metal-oxide-metal memristors,” Appl. Phys. A, vol. 107, no. 3, pp. 509–518, 2012.
Acknowledgments
The authors are grateful to Dr. Joseph E. Van Nostrand of AFRL/RITC for funding and for guidance of this effort (Phase I STTR contract FA8750-12-C-0157, Phase II STTR contract FA9550-11-C-0018).
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Geist, B.L., Strukov, D. & Kochergin, V. Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices. MRS Online Proceedings Library 1729, 53–58 (2014). https://doi.org/10.1557/opl.2015.83
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DOI: https://doi.org/10.1557/opl.2015.83