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Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

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Abstract

We have fabricated a ferroelectric resistive switching device of Pt/Bi1-δFeO3 (BFO)/SrRuO3 (SRO) in which the conductivity of BFO layer was controlled by changing the Bi-deficiency concentration. The devices showed a bipolar-type resistive switching effect, i.e., zero-crossing hysteretic current–voltage (I–V) characteristics. In addition, the I–V characteristics in both high and low resistance states are nonlinear, which can avoid a read-error problem in a passive crossbar memory array. Resistive switching characteristics measured in pulse-voltage mode revealed that the resistance values in low resistance states vary with the amplitude and duration time of the pulsed-voltage stresses, indicating possibility of multilevel switching. On the basis of the experimental results, we discuss the potential of the Pt/BFO/SRO device for application in a large-capacity nonvolatile memory.

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Acknowledgments

The authors would like to thank Prof. Tokura and Prof. Kawasaki for useful discussions. This research was supported in part by the Japan Society for the Promotion of Science (JSPS) through the “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program),” initiated by the Council for Science and Technology Policy (CSTP), and a Grant-in-Aid for Scientific Research (No. 22360280).

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Authors and Affiliations

  1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8562, Japan

    Atsushi Tsurumaki-Fukuchi, Hiroyuki Yamada & Akihito Sawa

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  1. Atsushi Tsurumaki-Fukuchi
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  2. Hiroyuki Yamada
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  3. Akihito Sawa
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Tsurumaki-Fukuchi, A., Yamada, H. & Sawa, A. Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces. MRS Online Proceedings Library 1430, 31–36 (2012). https://doi.org/10.1557/opl.2012.933

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  • DOI: https://doi.org/10.1557/opl.2012.933

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