Abstract
By pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.
AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), Vgs=-2, Vds=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.
This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.
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Acknowledgments
This work is supported by a DOD MURI monitored by AFOSR (Dr. Jim Hwang / Dr. Gregg Jessen)
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Cheney, D., Deist, R., Gila, B. et al. Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method. MRS Online Proceedings Library 1432, 143–149 (2012). https://doi.org/10.1557/opl.2012.1138
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DOI: https://doi.org/10.1557/opl.2012.1138