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Investigation of Amorphous IGZO TFT Employing Ti/Cu Source/Drain and SiNx Passivation

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Abstract

We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

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References

  1. H. Hosono, Thin Solid Films 515 15, 6000–6014 (2007).

    Article  CAS  Google Scholar 

  2. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya and H. Hosono, Applied Physics Letters 89, 112123 (2006).

    Article  Google Scholar 

  3. J. Lee, D. Kim, D. Yang, S. Hong, K. Yoon, P. Hong, C. Jeong, H. Park, S. Y. Kim and S. K. Lim, 2008 (unpublished).

  4. T. Arai, N. Morosawa, K. Tokunaga, Y. Terai, E. Fukumoto, T. Fujimori, T. Nakayama, T. Yamaguchi and T. Sasaoka, Proceeding of SID, 1033–1036 (2010).

  5. H.-H. Lu, H.-C. Ting, T.-H. Shih, C.-Y. Chen, C.-S. Chuang and Y. Lin, Proceeding of SID, 1136–1138 (2010).

  6. Y. G. Mo, M. Kim, C. K. Kang, J. H. Jeong, Y. S. Park, C. G. Choi, H. D. Kim and S. S. Kim, Proceeding of SID, 1037–1040 (2010).

  7. S. Takasawa, S. Ishibashi and T. Masuda, Proceeding of SID, 1313–1316 (2009).

  8. J. K. Jeong, H. Won Yang, J. H. Jeong, Y.-G. Mo and H. D. Kim, Applied Physics Letters 93 (12), 123508 (2008).

    Article  Google Scholar 

  9. D. Hong and J. F. Wager, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23 (6), L25 (2005).

  10. K.-S. Son, T.-S. Kim, J.-S. Jung, M.-K. Ryu, K.-B. Park, B.-W. Yoo, K. Park, J.-Y. Kwon, S.-Y. Lee and J.-M. Kim, Electrochemical and Solid-State Letters 12 (1), H26 (2009).

  11. S. Narushima, H. Hosono, J. Jisun, T. Yoko and K. Shimakawa, Journal of Non-Crystalline Solids 274, 313–318 (2000).

    Article  CAS  Google Scholar 

  12. F. Braud, J. Torres, J. Palleau, J. L. Mermet, C. Marcadal and E. Richard, Microelectronic Engineering 33, 293–300 (1997).

    Article  CAS  Google Scholar 

  13. P. Barquinha, A. M. Vilà, G. Gonçalves, L. Pereira, R. Martins, J. R. Morante and E. Fortunato, IEEE TRANSACTIONS ON ELECTRON DEVICES 55 4, 954–960 (2008).

    Article  CAS  Google Scholar 

  14. H.-K. Kim, S.-H. Han, T.-Y. Seong and W. K. Choi, Journal of The Electrochemical Society 148 (3), G114 (2001).

  15. Y. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono, Thin Solid Films 516 17, 5899–5902 (2008).

    Article  CAS  Google Scholar 

  16. G.-Y. Huang, C.-Y. Wang and J.-T. Wang, Journal of Physics: Condensed Matter 21 (19), 195403 (2009).

    Google Scholar 

  17. K. Jug, N. N. Nair and T. Bredow, Phys . Chem. Chem. Phys 7, 2616–2621 (2005).

    Article  CAS  Google Scholar 

  18. R. Schaub, E. Wahlström, A. Rønnau, E. Lægsgaard, I. Stensgaard and F. Besenbacher, SCIENCE 299, 377–379 (2003).

    Article  CAS  Google Scholar 

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Lee, Y.W., Choi, SH., Lee, JS. et al. Investigation of Amorphous IGZO TFT Employing Ti/Cu Source/Drain and SiNx Passivation. MRS Online Proceedings Library 1321, 1906 (2011). https://doi.org/10.1557/opl.2011.1091

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  • DOI: https://doi.org/10.1557/opl.2011.1091

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