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Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy

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Abstract

We have investigated a correlation between electronic deep levels and current collapses in AlGaN/GaN hetero-structures by capacitance-voltage and photo-capacitance spectroscopy techniques, using Schottky barrier diodes Three specific deep levels located at ~207, ~2.80, ~3.23eV below the conduction band were found to be significantly enhanced for the severe current collapse. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapses of the AlGaN/GaN hetero-structures.

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References

  1. S. T. Bradley, A. P. Young, L. J. Brillson, M. J. Murthy, W. J. Schaff, and L. F. Eastman, IEEE Trans. Electron Devices 48, 412 (2001).

    Article  CAS  Google Scholar 

  2. B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, and J. Han, Appl. Phys. Lett. 80, 1661 (2002).

    Article  CAS  Google Scholar 

  3. P. B. Klein, S. C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske, and R. L. Henry, Appl. Phys. Lett. 79, 3527 (2001).

    Article  CAS  Google Scholar 

  4. Z.-Q. Fang, D. C. Look, D. H. Kim, and I. Adesida, Appl. Phys. Lett. 87, 182115 (2005).

    Article  Google Scholar 

  5. A. Armstrong, A. Chakraborty, J. S. Speck, S. P. DenBaars, U. K. Mishra, and S. A. Ringel, Appl. Phys. Lett. 89, 262116 (2006).

    Article  Google Scholar 

  6. Y. Nakano, Y. Irokawa, and M. Takeguchi, Appl. Phys. Express 1, 091101 (2008).

    Article  Google Scholar 

  7. D. M. Hofmann, D. Kovalev, G. Steude, B. K. Meyer, A. Hoffmann, L. Eckey, R. Heitz, T. Detchprom, H. Amano, and I. Akasaki, Phys. Rev. B 52,16702 (1995).

    Article  CAS  Google Scholar 

  8. H. Fujimoto, W. Saito, A. Yoshioka, T. Nitta, Y. Kakikuchi, and Y. Saito, CS MANTECH Tech. Dig. 5.2 (2008).

  9. Z.-Q. Fang, B. Claflin, D. C. Look, D. S. Green, and R. Vetury, J. Appl. Phys. 108, 063706 (2010).

    Article  Google Scholar 

  10. A. Armstrong, A. R. Arehart, B. Moran, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. A. Ringel, Appl. Phys. Lett. 84, 374 (2004).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Chubu University, Kasugai, Aichi, 487-8501, Japan

    Yoshitaka Nakano

  2. National Institute of Materials Science, Tsukuba, Ibaraki, 305-0044, Japan

    Yoshihiro Irokawa

  3. POWDEC, Oyama, Tochigi, 323-0028, Japan

    Yasunobu Sumida, Shuichi Yagi & Hiroji Kawai

Authors
  1. Yoshitaka Nakano
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  2. Yoshihiro Irokawa
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  3. Yasunobu Sumida
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  4. Shuichi Yagi
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  5. Hiroji Kawai
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Nakano, Y., Irokawa, Y., Sumida, Y. et al. Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy. MRS Online Proceedings Library 1309, 1013090640 (2011). https://doi.org/10.1557/opl.2011.102

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