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Effect of growth temperature on the key properties of aluminum-doped zinc oxide thin films prepared by atomic layer deposition

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Abstract

Aluminum-doped zinc oxide films were prepared by atomic layer deposition using diethylzinc, trimethylaluminum, and water. High-purity water was used with low vacuum. The effect of growth temperature on characteristics of the films was investigated. The crystallinity was improved as growth temperature was increased from 180 to 235 °C, with the grain sizes increasing from 32.830 to 47.020 nm. The films possessed high transparency with a 95% transmission window blue shifted with growth temperature. This shift was seen in the energyband gaps which changed from 3.46 to 3.68 eV, leading to a decreased resistivity from 1.52 × 10−5 to 1.28 × 10−5 Ω cm.

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Acknowledgment

This work was supported by the Scientific and Technical Research Council of Turkey (TUBITAK) under Grant No. 1059B191200565-ID 893022. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award No. ECCS-1542202.

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Authors and Affiliations

  1. Education Faculty, Erciyes University, 38039, Kayseri, Turkey

    Emine Güneri

  2. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA

    Bethanie Stadler

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  1. Emine Güneri
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Correspondence to Emine Güneri.

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Güneri, E., Stadler, B. Effect of growth temperature on the key properties of aluminum-doped zinc oxide thin films prepared by atomic layer deposition. MRS Communications 9, 1105–1110 (2019). https://doi.org/10.1557/mrc.2019.82

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