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Growth of in situ multilayer diamond films by varying substrate-filament distance in hot-filament chemical vapor deposition

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Abstract

Single and multilayer diamond films were grown on silicon by varying substrate distance in hot-filament chemical vapor deposition. The grown films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. From SEM surface images, it was observed that the films grown at substrate distances of 8, 7, and 6 mm and temperatures of 740, 780, and 830 °C possessed cauliflower, pseudocubes, and finally well-faceted cubes morphology. SEM fracture cross-sectional investigations revealed that growth of pseudocubes initiated on the top of cauliflower structure. By using the parametric relations gathered from single layer diamond growth studies, first time, multilayer diamond coatings were grown in situ with tunable thickness by only varying the substrate distance from filament assembly during deposition.

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Acknowledgment

This work was supported by TÜBlTAK under 2216-Postdoctoral Fellowship Programme (Ref: B.02.1. TBT.0.06.01-216.01-677-6045).

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Authors and Affiliations

  1. Department of Physics, COMSATS Institute of Information Technology (CUT), Islamabad, 44000, Pakistan

    Mubarak Ali

  2. Department of Metallurgical and Materials Engineering, Istanbul Technical University, 34469, Maslak, Istanbul, Turkey

    Mustafa Ürgen

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Ali, M., Ürgen, M. Growth of in situ multilayer diamond films by varying substrate-filament distance in hot-filament chemical vapor deposition. Journal of Materials Research 27, 3123–3129 (2012). https://doi.org/10.1557/jmr.2012.378

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