Abstract
The composition, structure, morphology, and optical characteristics of hydrogenated amorphous silicon-oxycarbide (a-SiCxOyHz) materials were investigated as a function of experimental processing conditions and post-deposition thermal treatment. Thermal chemical vapor deposition (TCVD) was applied to the growth of three different types of a-SiCxOyHz films, namely, SiC-like (SiC1.08O0.07H0.21), Si-C-O (SiC0.50O1.20H0.22), and SiO2-like (SiC0.20O1.70H0.24). The resulting films were subsequently annealed at temperatures ranging from 500 °C to 1100 °C for 1 h in an argon atmosphere. The composition, structure, and morphology of as-deposited and post-annealed films were characterized by Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), nuclear-reaction analysis (NRA), and scanning electron microscopy. Corresponding optical properties were assessed by spectroscopic ultraviolet-visible ellipsometry (UV-VIS-SE). These studies led to the identification of an optimized process window for the growth of Er doped silicon oxycarbide (SiC0.5O1.0:Er) thin film with strong room-temperature photoluminescence emission measured around 1540 nm within a broad (460 nm to 600 nm) wavelength band. Associated modeling studies showed that the effective cross section for Er excitation in the SiC0.5O1.0:Er matrix was approximately four orders of magnitude larger than its analog for direct optical excitation of Er ions.
Similar content being viewed by others
References
A. Grill: Plasma enhanced chemical vapor deposited SiCOH dielectrics: From low-k to extreme low-k interconnect materials. J. Appl. Phys. 93, 1785 (2003).
C-C. Chiang, M-C. Chen, L-J. Li, Z-C. Wu, S-M. Jang, and M-S. Liang: Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetra-siloxane. J. Electrochem. Soc. 151(9), G612 (2004).
M.R. Wang, Rusli J.L. Xie, N. Babu, C.Y. Li, and K. Rakesh: Study of oxygen influences on carbon doped silicon oxide low-k thin films deposited by plasma enhanced chemical vapor deposition. J. Appl. Phys. 96, 829 (2004).
M. Salib, L. Liao, R. Jones, M. Morse, A. Liu, D. Samara-Rubio, D. Alduino, and M. Paniccia: Silicon photonics. Intel Technol. J. 8, 143 (2004).
L. Pavesi and D.J. Lockwood: Silicon Photonics (Springer, Berlin, 2004).
B. Jalall: Silicon lasers. APS News 15(3), 7 (2006).
Y-H. Kim, M.S. Hwang, H.J. Kim, J.Y. Kim, and Y. Lee: Infrared spectroscopy study of low-dielectric constant fluorine-incorporated and carbon-incorporated silicon oxide films. J. Appl. Phys. 90, 3367 (2001).
S. Gallis, M. Huang, H. Efstathiadis, E. Eisenbraun, E. Nyein, U. Hommerich, and A.E. Kaloyeros: Photoluminescence in erbi-um doped silicon oxycarbide thin films. Appl. Phys. Lett. 87, 091901 (2005).
S. Gallis, M. Huang, and A.E. Kaloyeros: Efficient energy transfer from silicon oxycarbide matrix to Er ions via indirect excitation mechanisms. Appl. Phys. Lett. 90, 161914 (2007).
S. Gallis, V. Nikas, M. Huang, E. Eisenbraun, and A.E. Kaloyeros: Comparative study of the effects of thermal treatment on the optical properties of hydrogenated amorphous silicon-oxycarbide. J. Appl. Phys. 102, 024302 (2007).
V.P. Tolstoy, I.V. Chernyshova, and V.A. Skryshevsky: Handbook of Infrared Spectroscopy of Ultrathin Films (Wiley, New York, 2003), Chap. 5.
G. Socrates: Infrared Characteristic Group Frequencies (Wiley, New York, 2001).
W.F.A. Besling, A. Goossens, B. Meester, and J. Schoonman: Laser-induced chemical vapor deposition of nanostructured silicon carbonitride thin films. J. Appl. Phys. 83, 544 (1998).
I.P. Lisovskii, V.G. Litovchenko, V.G. Lozinskii, and G.I. Steblovskii: IR spectroscopic investigation of SiO2 film stucture. Thin Solid Films 213, 164 (1992).
L. Calcagno, P. Musumeci, F. Roccaforte, C. Bongiorno, and G. Foti: Crystallization mechanism of amorphous silicon carbide. Appl. Surf. Sci. 184, 123 (2001).
S. Gallis, U. Futschik, W. Sherwood, S. Hayes, C.G. Fountzoulas, J. Castracane, A.E. Kaloyeros, and H. Efstathiadis: Thermal chemical vapor deposition of silicon carbide films as protective coatings for microfluidic structures, in Proceedings of the Materials Research Society Symposium, Silicon Carbide 2002—Materials, Processing and Devices, edited by S.E. Saddow, D.J. Larkin, N.S. Saks, and A. Schoener (Mater. Res. Soc. Symp. Proc. 672, Warrendale, PA, 2002), K2.4.
F. Demichells, C.F. Pirri, and E. Tresso: Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide. J. Appl. Phys. 72, 1327 (1992).
C.J. Fang, K.J. Gruntz, L. Ley, M. Cardona, F.J. Demond, G. Müller, and S. Kalbitzer: The hydrogen content of a-Ge:H and a-Si:H as determined by IR spectroscopy, gas evolution and nuclear reaction techniques. J. Non-Cryst. Solids 35–36, 255 (1980).
D.K. Basa and F.W. Smith: Annealing and crystallization processes in a hydrogenated amorphous Si-C alloy film. Thin Solid Films 192, 121 (1990).
F. Fujimoto, A. Ootuka, K-I. Komaki, Y. Iwata, I. Yamane, H. Yamashita, Y. Hashimoto, Y. Tawada, K. Nishimura, H. Okamoto, and Y. Hamakawa: Hydrogen content in a-SiC:H films prepared by plasma decomposition of silane and methane or ethylene. Jpn. J. Appl. Phys., Part 1 23, 810 (1984).
K. Nakazawa, S. Ueda, M. Kumeda, A. Morimoto, and T. Shimizu: NMR and IR studies on hydrogenated amorphous Si1–xCx films.Jpn. J. Appl. Phys., Part 1 21, L176 (1982).
K.L. Smith and K.M. Black: Characterization of the treated surfaces of silicon alloyed pyrolytic carbon and SiC. J. Vac. Sci. Technol., A 2, 744 (1984).
W.K. Choi, T.Y. Ong, L.S. Tan, F.C. Loh, and K.L. Tan: Infrared and x-ray photolectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films. J. Appl. Phys. 83, 4968 (1998).
F.G. Bell and L. Ley: Photoemission study of SiOx (0≤ x ≤2) alloys. Phys. Rev. B 37, 8383 (1988).
D.M. Wolfe, B.J. Hinds, F. Wang, G. Lucovsky, B.L. Ward, M. Xu, R.J. Nemanich, and D.M. Maher: Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model sys-tem for chemical and structural relaxation at SiC-SiO2 interfaces. J. Vac. Sci. Technol., A 17, 2170 (1999).
D. Briggs and G. Beamson: High Resolution XPS of Organic Polymers: The Scienta ESCA300 Database (Wiley, New York, 1992).
L. Esposito, G. Ottaviani, E. Carollo, and M. Bacchetta: Thermal stability of low-dielectric constant porous silica films. Appl. Phys. Lett. 87, 262909 (2005).
D. Das, J. Farjas, P. Roura, G. Viera, and E. Bertran: Thermal oxidation of polymer-like amorphous SixCyHwOz nanoparticles. Diamond Relat. Mater. 10, 1295 (2001).
P. Roura, J. Farjas, C. Rath, J. Serra-Miralles, E. Bertran, and P. Roca i Cabarrocas: Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated silicon materials. Phys. Rev. B 73, 085203 (2006).
E. Garcia-Caurel, G. Viera, E. Bertran, and A. Canillas: Study of the optical and structural properties of silicon-carbon nanometric powder using infrared phase modulated ellipsometry and electron microscopy. Phys. Status Solidi A 175, 373 (1999).
A. Stesmans: Dissociation kinetics of hydrogen-passivated Pb defects at the (111)Si/SiO2 interface. Phys. Rev. B 61, 8393 (2000).
H. Cui, R.J. Carter, D.L. Moore, H-G. Peng, D.W. Gidley, and P.A. Burke: Impact of reductive N2/H2 plasma on porous low-dielectric constant SiCOH thin films. J. Appl. Phys. 97, 113302 (2005).
I. Montero, L. Galán, O. Najmi, and J.M. Albella: Disorder-induced vibration-mode coupling in SiO2 films observed under normal-incidence infrared radiation. Phys. Rev. B 50, 4881 (1994).
G. Lucovsky, M.J. Mantini, J.K. Srivastava, and E.A. Irene: Low temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy. J. Vac. Sci. Technol., B 5, 530 (1987).
K. Maex, M.R. Baklanov, D. Shamiryan, F. Iacopi, S.H. Brongersma, and Z.S. Yanovitskaya: Low-dielectric constant materials for microelectronics. J. Appl. Phys. 93, 8793 (2003).
C.Q. Sun: A model of bonding and band-forming for oxides and nitrides. Appl. Phys. Lett. 72, 1706 (1998).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Gallis, S., Nikas, V., Eisenbraun, E. et al. On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide. Journal of Materials Research 24, 2561–2573 (2009). https://doi.org/10.1557/jmr.2009.0308
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/jmr.2009.0308