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Effect of UV Laser Irradiation on the properties of NiO films and ZnO/NiO Heterostructures

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Abstract

The present work accentuates the effect of UV laser irradiation on the conductivity of nickel oxide (NiO) thin films, deposited at various temperatures by radio-frequency reactive sputtering of Ni in oxygen containing atmosphere. The effect of UV irradiation on zinc oxide - nickel oxide heterostructures, obtained by sputtering, was examined as well. It was found that the resistivity of NiO changes from 12 Ω-cm to 0.62 Ω-cm, and the majority carrier concentration from 3.95x10 holes/cm to 4.22x10 electrons/cm . The current-voltage (I-V) characteristics of the ZnO/NiO heterostructure shows an improved p-n diode behavior with the forward bias current increasing for the laser-irradiated ZnO/NiO compared to the as-deposited stack. The observed improvement in diode-like behavior suggests that laser irradiation can be an important technique to controllably change the structural, electrical and optical properties of metal oxide thin films.

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Authors and Affiliations

  1. Department of EECS, University of Toledo, Toledo, OH, 43606, U.S.A.

    Srikanth Itapu, Kamruzzaman Khan & Daniel G. Georgiev

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  1. Srikanth Itapu
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  2. Kamruzzaman Khan
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  3. Daniel G. Georgiev
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Itapu, S., Khan, K. & Georgiev, D.G. Effect of UV Laser Irradiation on the properties of NiO films and ZnO/NiO Heterostructures. MRS Advances 1, 293–298 (2016). https://doi.org/10.1557/adv.2016.99

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  • DOI: https://doi.org/10.1557/adv.2016.99

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