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Molecular Dynamics Simulation of Epitaxial Growth

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Molecular dynamics simulation has been used to study the growth of crystalline or amorphous, metal, and semiconductor films. These simulations show that the general form of the potential is critical in determining the morphology of vapor-phase grown films, with temperature playing a less important role. The high mobility of particles on the growing front implies that thermodynamics, together with kinetics, is important for thin film growth.

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Authors
  1. Ivan K. Schuller
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Schuller, I.K. Molecular Dynamics Simulation of Epitaxial Growth. MRS Bulletin 13, 23–27 (1988). https://doi.org/10.1557/S0883769400063880

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