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Growth of Single Crystal type A and type B CoxNi1-xSi2 Layers on Si(111)

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Abstract

Single crystal type A and type B CoxNi1-xSi2 layers have been grown on Si(111) by deposition of Co-Ni alloy in UHV and annealing. The dependence of CoxNi1-xSi2 layer orientation on the thickness of deposited metal is similar to that observed for pure nickel reaction. Silicon deposition along with the Co-Ni alloy allows the growth of type B oriented CoxNi1-xSi2. Auger, LEED, RBS and TEM analyses suggest that the composition of the ternary silicide layers is inhomogeneous. The advantages and disadvantages of this material in device application will be briefly discussed.

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References

  1. R. T. Tung, J. M. Gibson and J. M. Poate, Phys. Rev. Lett. 50, 429 (1983).

    Article  CAS  Google Scholar 

  2. R. T. Tung, J. M. Gibson and A. F. J. Levi, Appl. Phys. Lett. 48, 1264 (1986).

    Article  CAS  Google Scholar 

  3. P. V. Geld and F. A. Sidorenko, Silitsidi Perekhodnikh Metallov Chetvertogo Perioda (Izdatelstvo “Metallurgiya”, Moscow, 1971).

  4. J. C. Hensel, R. T. Tung, J. M. Poate and F. C. Unterwald, Appl. Phys. Lett. 44, 913 (1984).

    Article  CAS  Google Scholar 

  5. R. T. Tung, A. F. J. Levi and J. M. Gibson, Appl. Phys. Lett. 48, 635 (1986).

    Article  CAS  Google Scholar 

  6. F. M. d’Heurle, D. D. Anfiteatro, V. R. Deline and T. G. Finstad, Thin Solid Films 128, 107 (1985), and T. G. Finstad, D. D. Anfiteatro, V. R. Deline, F. M. d’Heurle, P. Gas, V. L. Moruzzi, K. Schwarz and J. Tersoff, Thin Solid Films 135, 229 (1986).

    Article  Google Scholar 

  7. R. T. Tung, K. K. Ng, J. M. Gibson and A. F. J. Levi, Phys. Rev. B 33, 7077 (1986).

    Article  Google Scholar 

  8. Since the densities of Co and Ni are similar, an Å of Co-Ni of any composition is ~ 1.1 ML on Si(111).

  9. C. Pirri, J. C. Peruchetti, D. Bolmont and G. Gewinner, Phys. Rev. B 33, 4108 (1986).

    Article  Google Scholar 

  10. F. Hellman and R. T. Tung, to be published.

  11. R. T. Tung, J. L. Batstone and A. F. J. Levi, to be published.

  12. R. T. Tung, J. Vac. Sci. Technol. 1987 in press.

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Authors and Affiliations

  1. AT&T Bell Laboratories, 07974, Murray Hill, NJ, USA

    R. T. Tung, F. Hellman, J. M. Gibson & T. Boone

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  1. R. T. Tung
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  2. F. Hellman
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  3. J. M. Gibson
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  4. T. Boone
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Tung, R.T., Hellman, F., Gibson, J.M. et al. Growth of Single Crystal type A and type B CoxNi1-xSi2 Layers on Si(111). MRS Online Proceedings Library 91, 451–456 (1987). https://doi.org/10.1557/PROC-91-451

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  • DOI: https://doi.org/10.1557/PROC-91-451

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