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Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants

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Abstract

In this study 300keV and 1MeV Si vacancy engineering implants have been used to optimise the activation of a 2keV 1×1015cm-2 B implant into SOI. Although the two implants generate a similar areal density of excess vacancies in the SOI top layer, Hall Effect measurements show that low temperature activation is possible to a greater level with the 300keV Si co-implant than with the 1MeV implant. Hall and SIMS data are consistent with a high level of activation of the B at 700°C, with no significant diffusion at the metallurgical junction depth.

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Authors and Affiliations

  1. Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK

    A. J. Smith, B. Colombeau, N. Bennett, R. Gwilliam, N. Cowern & B. Sealy

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  1. A. J. Smith
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  2. B. Colombeau
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  3. N. Bennett
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  4. R. Gwilliam
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  5. N. Cowern
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  6. B. Sealy
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Smith, A.J., Colombeau, B., Bennett, N. et al. Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants. MRS Online Proceedings Library 864, 71 (2004). https://doi.org/10.1557/PROC-864-E7.1

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  • DOI: https://doi.org/10.1557/PROC-864-E7.1

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