Abstract
In universal relaxation, a material’s complex dielectric susceptibility follows a fractional power law f1-n where 0 < n < 1 over multiple decades of frequency. In a variety of materials, including Ba0.5Sr0.5TiO3, dielectric relaxation has been observed to follow this universal relaxation model with values of n close to 1. In this work we have shown that the universal relaxation model can be used to calculate dielectric loss even when n is very close to 1. Our calculated Q-factors agree with measured values at 1 MHz; this agreement suggests that this technique may be used for higher frequencies where network analyzer measurements and electrode parasitics complicate Q-factor determination.
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Acknowledgements
This work was supported by DARPA and DMEA through the Center for Nanoscience Innovation for Defense program (CNID) under award number DMEA90-02-2-0215, and by the ARO through the Multifunctional Adaptive Radio Radar and Sensors program (MARRS MURI) under award number DAAD19-01-1-0496, and by the ONR through the Center for Advanced Nitride Electronics program (CANE MURI) under award number N0014-01-1-0764.
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Pervez, N.K., Lu, J., Stemmer, S. et al. AC Loss Modeling in Ba0.5Sr0.5TiO3 Using Dielectric Relaxation. MRS Online Proceedings Library 833, 20–25 (2004). https://doi.org/10.1557/PROC-833-G1.10
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DOI: https://doi.org/10.1557/PROC-833-G1.10