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Optical Properties of Ge Nanowires Grown on Silicon (100) and (111) Substrates

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Abstract

In this paper, we report Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations. Ge NWs grown are ~40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ~300 cm−1 indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW–Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the <111> preferential growth direction of Ge NWs.

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Acknowledgments

The authors thank Mr. X. Li and Dr. S. Sharma of Hewlett-Packard Laboratories for experimental assistance and useful discussion and Dr. R. Stanley Williams for his support. The work at Hewlett-Packard is partially supported by DARPA under agreement MDA972-01-3-0005. The work at NJIT is in part supported by the Foundation at NJIT, SRC and NSF.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey, 07102, USA

    V. Sharma, B. V. Kamenev & L. Tsybeskov

  2. Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, California, 94304, USA

    T. I. Kamins

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  1. V. Sharma
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  2. B. V. Kamenev
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  3. L. Tsybeskov
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  4. T. I. Kamins
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Sharma, V., Kamenev, B.V., Tsybeskov, L. et al. Optical Properties of Ge Nanowires Grown on Silicon (100) and (111) Substrates. MRS Online Proceedings Library 832, 279–284 (2004). https://doi.org/10.1557/PROC-832-F7.20

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  • DOI: https://doi.org/10.1557/PROC-832-F7.20

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