Abstract
We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.
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References
R. S. Wagner in Whisker Technology, edited by A. P. Levitt, John Wiley & Sons, New York (1970).
C. Chen, C. Yeh, C. Chen, M. Yu, H. Liu, J. Wu, K. Chen, L. Chen, J. Peng, and Y. Chen, J. Am, Chem. Soc., 123, 2791 (2001).
F. Qian, Y. Li, S. Gradecak, D. Wang, C. J. Barrelet, and C. M. Lieber, Nano Lett. 4, 871 (2004).
J. Su, G. Cui, M. Gherasimova, H. Tsukamoto, J. Han, D. Ciuparu, S. Lim, L. Pfefferle, Y. He, A.V. Nurmikko, C. Broadbridge, and A. Lehman, Appl. Phys. Lett., accepted for publication.
A. Koukitu, N. Takahashi, T. Taki, and H. Seki, J. Cryst. Growth, 170, 306 (1997).
J. Y. Yang, C. P. Mehnert, and M. S. Wong, Angew. Chem. Int. Ed. 38, 56 (1999)
J. E. Northrup and J. Neugebauer, Phys. Rev. B. 53, R10477 (1996).
L. Filippidis, H. Siegle, A. Hoffmann, C. Thomsen, K. Karch, and F. Bechstedt, phys. stat. sol. (b), 198, 621 (1996)
J. Liu, X. Meng, Y. Jiang, C. Lee, I. Bello, and S. Lee, Appl. Phys. Lett. 83, 4241 (2003)
After growth of GaN nanowires for 30 min, TMGa/TMAl was closed/opened for 1, 2, 4, 8, and 5 minutes, interleaved by 4 min growth of GaN with TMI flowing continuously.
T. B. Massalski, ed., Binary Alloy Phase Diagrams, ASM international, Materials Park (1990).
K. A. Dick, K. Deppert, M. W. Larsson, T. Martensson, W. Seifert, L. R. Wallenberg and L. Samuelson, Nature Mat. 3, 380 (2004); D. Wang, F. Qian, C. Yang, Z. Zhong and C. M. Lieber, Nano Letters, 4, 871 (2004).
J. E. Northrup and J. Neugebauer, Phys. Rev. B 53, R10477 (1996).
Acknowledgments
Discussion with and assistance from G. Cheng, A. Sanders, I. Kretzschmar, R. Munden, E. Stern, and M. A. Reed, is acknowledged. The authors acknowledge support by DOE and NSF.
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Su, J., Gherasimova, M., Cui, G. et al. Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition. MRS Online Proceedings Library 831, 248–253 (2004). https://doi.org/10.1557/PROC-831-E12.4
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DOI: https://doi.org/10.1557/PROC-831-E12.4