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Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes with Optical and Electrical Time-Resolved Techniques

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Abstract

Forward-to-reverse bias step-recovery measurements were performed on In.07Ga.93N/GaN and Al.36Ga.64N/Al.46Ga.54N quantum-well (QW) light-emitting diodes grown on sapphire. With the QW sampling the minority-carrier hole density at a single position, distinctive two-phase optical decay curves were observed. Using diffusion equation solutions to self-consistently model both the electrical and optical responses, hole transport parameters τp = 758 ± 44 ns, Lp = 588 ± 45 nm, and µp = 0.18 ± 0.02 cm2/Vs were obtained for GaN. The mobility was thermally activated with an activation energy of 52 meV, suggesting trap-modulated transport. Optical measurements of sub-bandgap peaks exhibited slow responses approaching the bulk lifetime. For Al.46Ga.54N, a longer lifetime of τp = 3.0 µs was observed, and the diffusion length was shorter, Lp ≈ 280 nm. Mobility was an order of magnitude smaller than in GaN, µp ≈ 10−2 cm2/Vs, and was insensitive to temperature, suggesting hole transport through a network of defects.

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Acknowledgements

The authors would like to thank T. M. Bauer and K. W. Fullmer for helpful technical assistance as well as C. H. Seager for thoughtful discussions. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

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  1. Sandia National Laboratories, Albuquerque, NM, 87185, USA

    R. J. Kaplar, S. R. Kurtz, D. D. Koleske, A. A. Allerman, A. J. Fischer & M. H. Crawford

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  1. R. J. Kaplar
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  2. S. R. Kurtz
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  3. D. D. Koleske
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  4. A. A. Allerman
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  5. A. J. Fischer
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Kaplar, R.J., Kurtz, S.R., Koleske, D.D. et al. Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes with Optical and Electrical Time-Resolved Techniques. MRS Online Proceedings Library 831, 108–113 (2004). https://doi.org/10.1557/PROC-831-E10.9

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