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High Speed Ge Photodetectors on Si Platform for GHz Optical Communications in C+L Bands

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Abstract

We present a high speed, high responsivity, tensile strained Ge p-i-n photodetector selectively grown on Si platform that covers the whole C band and a large part of the L band for high capacity optical communications. The device shows a 3dB bandwidth of 2.5 GHz and its responsivities at 1310nm and 1550nm are comparable to commercial InGaAs photodetectors currently used in telecommunications. The device has promising applications in Si microphotonics such as the fiber-to-the-home technology.

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Acknowledgment

The authors thank Analog Devices, Inc, USA and Pirelli Lab, S.p.A, Italy for supporting this research.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA

    Jifeng Liu, Jurgen Michel, Douglas D. Cannon, D. Pan, David T. Danielson, Samerkhae Jongthammanurak, Kazumi Wada & Lionel C. Kimerling

  2. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA

    Wojciech Giziewicz & Clifton G. Fonstad

  3. Analog Devices, Inc., Cambridge, Massachusetts, 02139, USA

    John Yasaitis

Authors
  1. Jifeng Liu
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  2. Jurgen Michel
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  3. Douglas D. Cannon
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  4. Wojciech Giziewicz
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  5. D. Pan
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  6. David T. Danielson
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  7. Samerkhae Jongthammanurak
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  8. John Yasaitis
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  9. Kazumi Wada
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  10. Clifton G. Fonstad
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  11. Lionel C. Kimerling
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Liu, J., Michel, J., Cannon, D.D. et al. High Speed Ge Photodetectors on Si Platform for GHz Optical Communications in C+L Bands. MRS Online Proceedings Library 829, 24–28 (2004). https://doi.org/10.1557/PROC-829-B6.9

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  • DOI: https://doi.org/10.1557/PROC-829-B6.9

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