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Room Temperature Hydrogen Gas Sensitivity of Nanocrystalline-Doped Tin Oxide Sensor Incorporated into MEMS Device

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Abstract

Nanocrystalline indium oxide (In2O3)-doped tin oxide (SnO2) thin fdm sensor has been sol-gel dip-coated on a microelectromechanical systems (MEMS) device. The micro-sensor device is successfully utilized to sense ppm level H2 at room temperature with high sensitivity. The chamber pressure has no pronounce effect on the room temperature H2 sensitivity.

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Acknowledgements

Authors thank NASA-Glenn, National Science foundation (Grant # NSF CTS 0350572), and Florida Space Grant Consortium (FSGC) for financial support.

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Authors and Affiliations

  1. Mechanical Materials Aerospace Engineering (MMAE) Department, University of Central Florida (UCF), Advanced Materials Processing and Analysis Center (AMPAC), Engineering #381, 4000 Central Florida Blvd., Orlando, FL, 32816, USA

    Satyajit Shukla, Rajnikant Agrawal, Hyoung Cho & Sudipta Seal

  2. Kennedy Space Center (KSC-NASA), FL, 32899, USA

    Lawrence Ludwig

Authors
  1. Satyajit Shukla
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  2. Rajnikant Agrawal
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  3. Lawrence Ludwig
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  4. Hyoung Cho
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  5. Sudipta Seal
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Correspondence to Satyajit Shukla.

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Shukla, S., Agrawal, R., Ludwig, L. et al. Room Temperature Hydrogen Gas Sensitivity of Nanocrystalline-Doped Tin Oxide Sensor Incorporated into MEMS Device. MRS Online Proceedings Library 828, 73–78 (2004). https://doi.org/10.1557/PROC-828-A1.6

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  • DOI: https://doi.org/10.1557/PROC-828-A1.6

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