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Controlling Area-Selective Atomic Layer Deposition of HfO2 Dielectric by Self-assembled Monolayers

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Abstract

A series of self-assembled molecules have been investigated as deactivating agents for the HfO2 atomic layer deposition (ALD). Three important factors of self-assembled monolayers (SAMs) deactivating efficiency towards ALD—chain length, reactivity and steric effect—have been investigated and discussed as well as the initial blocking mechanism of this process. This investigation shows that in order to achieve satisfactory deactivation, it is crucial to choose high reactivity, low steric effect molecules with certain chain length to form condensed, high hydrophobic organic monolayers.

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Acknowledgments

This work is supported in part by the NSF/SRC center for Enviromentally Benign Semiconductor Manufacturing, Award No. Q423740, Stanford Initiative for Nano Materials and Process, and Center for Integrated System.

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Authors and Affiliations

  1. Department of Chemistry, Stanford University, Stanford, California, 943052, USA

    Rong Chen

  2. Department of Material Science and Engineering, Stanford University, Stanford, California, 943052, USA

    Hyoungsub Kim & Paul C. McIntyre

  3. Department of Chemical Engineering, Stanford University, Stanford, California, 943052, USA

    Stacey F. Bent

Authors
  1. Rong Chen
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  2. Hyoungsub Kim
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  3. Paul C. McIntyre
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  4. Stacey F. Bent
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Chen, R., Kim, H., McIntyre, P.C. et al. Controlling Area-Selective Atomic Layer Deposition of HfO2 Dielectric by Self-assembled Monolayers. MRS Online Proceedings Library 811, 191–196 (2003). https://doi.org/10.1557/PROC-811-D3.3

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  • DOI: https://doi.org/10.1557/PROC-811-D3.3

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