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Effects of Si-doping on the Microstructure of AlGaN/GaN Multiple-quantum-well

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Abstract

The effects of silicon-doping on the microstructure of Al0.07Ga0.93N/GaN multiple-quantum-well (MQW) have been studied by TEM. Significant changes of surface morphology and dislocation core structures have been observed due to Si-doping in the Al0.07Ga0.93N barriers. Threading dislocations create surface pits in the MQW as a result of Si doping. With an increasing doping level, the pits change the shape from small faceted pyramid to large cone. The formation mechanism of the surface pits has been discussed from both dynamics and kinetics points of view. We have also observed nanopipes constrict to form closed core screw dislocations in the MQW due to Si-doping.

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Acknowledgments

This work is supported by an international NEDO (New Energy and Industrial Technology Development Organization) program (NO 01-MB10).

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Authors and Affiliations

  1. Department of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287, USA

    R. Liu & F. A. Ponce

  2. H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, UK

    S-L. Sahonta & D. Cherns

  3. Department of Materials Science and Engineering, Meijo University, Nagoya, 468, Japan

    H. Amano & I. Akasaki

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  1. R. Liu
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  2. F. A. Ponce
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  3. S-L. Sahonta
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  4. D. Cherns
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  5. H. Amano
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  6. I. Akasaki
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Liu, R., Ponce, F.A., Sahonta, SL. et al. Effects of Si-doping on the Microstructure of AlGaN/GaN Multiple-quantum-well. MRS Online Proceedings Library 798, 512–517 (2003). https://doi.org/10.1557/PROC-798-Y5.33

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  • DOI: https://doi.org/10.1557/PROC-798-Y5.33

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