Abstract
The optical and electrical properties of InN films with different levels of carrier concentrations have been investigated. Hall effect measurements at room temperature show that the InN films are n-type with carrier concentration, ne, ranging from ~ 7×1017 cm−3 to ~ 3×1020 cm−3 and corresponding mobility, µ, of ~ 1300 to 50 cm2V−1s−1. Optical absorption spectra of these films show a bandgap absorption edge ~ 0.6 eV for the InN sample with the lowest ne, and 1.5 eV for the InN sample with the highest ne. However, after corrections for the degeneracy effects, all samples show an intrinsic Eg ~ (0.60 ± 0.05) eV. Temperature dependent (5–600 K) electrical measurements show that ne is nearly independent of temperature below 300 K, perhaps due to the presence of donor energy levels resonating with the InN conduction band. However, all the samples show an exponential increase in ne above 300 K due to excitation of other shallow donor like sources. Mobility versus temperature graph shows a maximum ~ 200 K for InN film with ne = 7×1017 cm−3 and moves towards lower temperature with increasing ne.
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Acknowledgments
This work was supported by the Center for Smart Sensors and Integrated Microsystems at Wayne Sate University. We thank Dr. L. Rimai for useful discussions.
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Haddad, D.B., Dai, H., Naik, R. et al. Optical and Electrical Properties of Low to Highly-Degenerate InN Films. MRS Online Proceedings Library 798, 289–294 (2003). https://doi.org/10.1557/PROC-798-Y12.7
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DOI: https://doi.org/10.1557/PROC-798-Y12.7