Skip to main content
SpringerLink
Log in

Resistance to cracking of a stretchable semiconductor: Speed of crack propagation for varying energy release rate

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We have measured and calculated the propagation velocity of successive cracks in a single sample of amorphous SiNx as a function of energy release rate. We have obtained the conditions for controlled, repetitive crack formation by using a substrate of compliant plastic that survives the cracking of a thin film formed on it. We have recorded the crack velocity curves using high-speed micro-photography using dark field illumination. Under uniform, uniaxial tensile strain, the films crack in an array of essentially straight, parallel lines, if the increase of the strain density is slow. We find reasonable agreement in the comparison of theory and experiment and find a linear relationship between the initial velocity and energy release rate threshold. Consequently, in cases where the theoretical agreement with the data is reasonable, the successive cracks show velocity curves that scale with each other.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Technology and Applications of Hydrogenated Amorphous Silicon, Springer Series in Materials Science, 37, Ed. R.A. Street, Springer-Verlag, Berlin, 2000.

  2. See, for example, J.N. Sandoe, Digest of Technical Papers of the Society for Information Display 29, 293(1998).

  3. Bernd Herold, Martin Geyer and Clifford J. Studman, Fruit contact pressure distributions—equipment, Computers and Electronics in Agriculture, 32, 167 (2001).

    Google Scholar 

  4. Beuth, J.K., Int. J. Solid Structures 29, 1657 (1992)

    Article  Google Scholar 

  5. Z. Cedric Xia, John W. Hutchinson, Journal of the Mechanics and Physics of Solids 48, 1107 (2000)

    Article  Google Scholar 

  6. J. Liang, R. Huang, J. H. Prévost, Z. Suo, Int. J. Solids and Structures 40, 2343 (2003)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, NJIT, Newark, NJ, 07102, USA

    Sheng Liu, Hee C. Lim, Min Qu, John F. Federici & Gordon A. Thomas

  2. Department of Electrical Engineering, Princeton University, Princeton, NJ, USA

    Helena Gleskova & Sigurd Wagner

Authors
  1. Sheng Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Hee C. Lim
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Min Qu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. John F. Federici
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Gordon A. Thomas
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Helena Gleskova
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Sigurd Wagner
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Liu, S., Lim, H.C., Qu, M. et al. Resistance to cracking of a stretchable semiconductor: Speed of crack propagation for varying energy release rate. MRS Online Proceedings Library 795, 463–468 (2003). https://doi.org/10.1557/PROC-795-U8.19

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-795-U8.19

Search

Navigation