Abstract
Lateral growth of poly-Ge at temperatures as low as 150°C is reported. External mechanical stress has been properly manipulated to drive the low temperature Cu-induced crystallization of poly-Ge wherever Cu is deposited to form the crystallization seed for lateral growth. Uniaxial compressive stress has been externally applied to the Ge layer by bending the flexible PET substrate inward. A 10-hour period thermo-mechanical post-treatment in the presence of 0.05% equivalent compressive strain leads to a growth rate of 2.5 µm/hour in the direction of the applied stress and 1.8 µm/hour in the perpendicular direction, as confirmed by SEM analysis. We believe that partial growth of the Cu-seeded poly-Ge region in the form of tetragonal structures is the key feature which leads to the lateral growth of the pure-Ge strip. Elimination of the compressive stress hinders the lateral growth completely, even at reasonably high temperatures.
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Acknowledgement
This work has been supported with a grant from the Ministry of Industry and partial support from Research Council of the University of Tehran. Authors wish to appreciate Mr. S. Kiani for SEM analysis and Dr. E. Asl Soleimani for his assistance during the work.
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Hekmatshoar, B., Shahrjerdi, D., Mohajerzadeh, S. et al. Stress-assisted Copper-induced Lateral Growth of Polycrystalline Germanium. MRS Online Proceedings Library 795, 397–402 (2003). https://doi.org/10.1557/PROC-795-U6.10
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DOI: https://doi.org/10.1557/PROC-795-U6.10