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Enhancement of Photocarrier Lifetime Due to Charge Separation in a-Si:H/a-Ge:H Superlattices

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Abstract

The lifetime of photogenerated electrons in a-Ge:H/a-Si:H multilayer structures with layers about 100Å thick, is enhanced by two orders of magnitude above the value in bulk a-Ge:H. This lifetime enhancement effect is explained by charge separation produced by layers, due to the assymmetry in the conduction and valence band offsets at the interfaces. The peak in the electron lifetime as a function of superlattice periodicity is determined by a trade-off between the electron tunneling rate into the a-Si:H barriers and electrostatic repulsion of holes due to photo-induced space charge.

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Author notes

  1. C. R. Wronski

    Present address: Center for Microelectronics and Macroelectronics, Pennsylvania State University, 16802, University Park, PA, USA

Authors and Affiliations

  1. Exxon Research and Engineering, Route 22 East, 08801, Annandale, NJ, USA

    C. R. Wronski, T. Tiedje & B. Abeles

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  1. C. R. Wronski
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  2. T. Tiedje
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  3. B. Abeles
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Wronski, C.R., Tiedje, T. & Abeles, B. Enhancement of Photocarrier Lifetime Due to Charge Separation in a-Si:H/a-Ge:H Superlattices. MRS Online Proceedings Library 77, 635–640 (1986). https://doi.org/10.1557/PROC-77-635

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  • DOI: https://doi.org/10.1557/PROC-77-635

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