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Forkation and Oxidation of Titanium Silicide

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Abstract

Refractory metal suicides have been used widely in VLSI fabrication, owing to their low resistivity, high-temperature compatibility, and oxidiz-ability. In this work, we have studied the titanium suicide formation, using a rapid thermal processor (RTP). Isothermal and isochronal sintering experiments were carried out to determine the appropriate process steps. The selective etch of the unreacted Ti was characterized. The sintered films were characterized by four-point probe, X-ray diffraction, and Auger electron spectroscopy. We also studied the oxidation at 800–1000°C of Ti suicide formed by sintering Ti and polycrystalline silicon using a RTP in N2 ambient. The oxidation results of Ti suicide formed using RTP in N2 ambient are compared with those formed using furnace sintering in vacuum/argon ambient and those deposited by cosputtering.

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References

  1. C. K. Lau, Y. C. See, D. B. Scott, J. M. Bridges, S. M. Perna, and R. D. Davies, IEDH Tech. Dig., 714 (1982).

  2. C. Y. Ting, S. S. Iyer, C. M. Osburn, G. J. Hu, and A. H. Schweighart, ECS Dig. Extended Abstract 82, 254 (1982).

    Google Scholar 

  3. C. K. Lau, ECS Dig. Extended Abstract 83, 569 (1983).

    Google Scholar 

  4. M. E. Alperin, T. C. Holaway, R. A. Halten, DC.D. Gosmeyer, R. V. Karnaugh, and W. D. Parmantie, IEEE ED–32. 141 (1985).

  5. R. A. Haken, J. Vac. Sci. Tech. B3, 1657 (1985).

    Article  Google Scholar 

  6. Y. Koh, F. Chien, and M. Vora, J. Vac. Sci. Tech. B3, 1715 (1985).

  7. J-R. Chen, M-P. Houng, S-K. Hsiung, and Y-C. Liu, Appl. Phys. Lett. 29, 598 (1980).

    Google Scholar 

  8. J-R. Chen, Y-C. Liu, and S-D. Chu, J. Electron Materials 11, 355 (1982).

    Article  CAS  Google Scholar 

  9. F. M. d’Heurle, E. A. Irene, and C. Y. Ting, Appl. Phys. Lett. 42, 361 (1983).

    Article  Google Scholar 

  10. J. E. Baglin, F. M. d’Heurle, and C. S. Peterson, J. Appl. Phys. 54, 1849 (1983).

    Article  CAS  Google Scholar 

  11. S. P. Muraka, Silicides for VLSI Applications (Academic Press, New York, 1983), Chapter 5.

  12. C. Y. Ting and S. S. Iyer, Proceedings of 2nd International IEEE VLSI Multilevel Interconnection Conference, 1985, 307.

  13. M. Tanielian, R. Lajos, and S. Blackstone, J. Electrochem. Soc. 132, 1456 (1985).

    Article  CAS  Google Scholar 

Download references

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Authors and Affiliations

  1. Electronic Research Laboratories - Photographic Products Group, Eastman Kodak Company, 14650, Rochester, New York, USA

    Tzuen-Luh Huang

  2. Corporate Research Laboratories, Eastman Kodak Company, 14650, Rochester, New York, USA

    Shuit-Tong Lee

Authors
  1. Tzuen-Luh Huang
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  2. Shuit-Tong Lee
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Huang, TL., Lee, ST. Forkation and Oxidation of Titanium Silicide. MRS Online Proceedings Library 77, 339–344 (1986). https://doi.org/10.1557/PROC-77-339

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  • DOI: https://doi.org/10.1557/PROC-77-339

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