Skip to main content
SpringerLink
Log in

Molecular Dynamics Simulation of Copper Thin Film Growth on β-Ta (002) Substrate

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Tantalum can be used both as a diffusion barrier and an adhesion layer for copper metallization for semiconductor devices. Experiments show that β-Ta (200) substrates promote (111) texture growth in copper films. In this study, we first create an embedded atom method (EAM) Cu-Ta potential developed by our force matching method (FMM); then the potential is used for Molecular Dynamics (MD) simulations of initial copper thin film growth on β-Ta substrates. Both Cu/Ta interfacial structures and copper film structure are investigated. The relevance to (111) texturing is discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R.P. Vinci, E.M. Zielinski, J.C. Bravman, Thin solid films, 262 (1995) 142–153

    Article  CAS  Google Scholar 

  2. A Gladkikh, M Karpovski, A Palevski and Y. S. Kaganovskii, Journal of Physics D: Appl. Phys., 31 (1998) 1626–1629.

    Article  CAS  Google Scholar 

  3. C. Ryu, A. L. S. Loke, T. Nogami, S. S. Wong, Proceedings of IEEE International Reliability Physics Symposium, 1997, p 201

    Google Scholar 

  4. J.Y. P. Wang, H. Zhang, I. Hashim, G. Dixit, F. Chen, Mat. Res. Soc. Proc. v 564 1998 pp 293–298

    Article  Google Scholar 

  5. Kee-Won Kwon, C. Ryu, R. Sinclair, S. S. Wong, Applied Physics Letters, 71(1997) pp 3069–3071

    Article  CAS  Google Scholar 

  6. S. S. Wong, C. Ryu, H. Lee, ALS. Loke, K. W. Kwon, S. Bhattacharya, R. Eaton, R. Faust, B. Mikkola, J. Mucha, J. Ormando, Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat.No.98EX102). IEEE, New York, NY, USA; 1998; 304 pp 107-9.

    Article  Google Scholar 

  7. E.M. Zielinski, R. P. Vinci, and J.C. Bravmean, J. Elec. Mat. 24 (1995) pp 1485-92

    Article  CAS  Google Scholar 

  8. K. Weiss, S. Riedel, S. E. Schulz, M. Schwerd, H. Helneder, H. Wendt and T. Gessner, Microelectronics Engineering 49 (2000) 433–440

    Article  Google Scholar 

  9. C.L. Rohrer, Modeling Simul. Mater. Sci. Eng. 2, 119(1994)

    Article  CAS  Google Scholar 

  10. A.M. Guellil and J.B. Adams, J. Mater. Res., v 7, 1992, pp 639–652

    Article  CAS  Google Scholar 

  11. R. A. Johnson and D.J. Oh, Journal of Materials Research, v 4. n5, 1989, pp 1195–1201.

    Article  Google Scholar 

  12. Z. Wang, Y. Li, J.B. Adams, Surface Science, 450 (2000) 51–63.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Chemical and Materials Engineering Department, Arizona State University, Tempe, AZ, 852876006, USA

    Youhong Li & James B. Adams

Authors
  1. Youhong Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. James B. Adams
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Li, Y., Adams, J.B. Molecular Dynamics Simulation of Copper Thin Film Growth on β-Ta (002) Substrate. MRS Online Proceedings Library 721, 37 (2002). https://doi.org/10.1557/PROC-721-J3.7

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-721-J3.7

Search

Navigation