Skip to main content
SpringerLink
Log in

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

HfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. B. Yu, H. Wang, C. Riccobene, Q. Xiang, M.-R. Lin, VLSI Tech. Dig., p.45, 2000

    Google Scholar 

  2. T. Ghani, K. Mistry, P. Packan, S. Thompson, M. Stettler, S. Tyagi, M. Bohr, Tech. Dig. VLSI Symp, p147, 2000

    Google Scholar 

  3. G. D. Wilk, R. M. Wallace, J. M. Anthony, Journal of Applied Physics, 89, 10, 2001

    Article  Google Scholar 

  4. E. H. Nicollian, J. R. Rews, MOS (Metal Oxide Semiconductor) Physics and Technology, (A Wiley-Interscience Publication, 1982)

    Google Scholar 

  5. B. H. Lee, L. Kang, R. Nieh, W.j. Qi, J. C. Lee, Applied Physics Letter, 76, 14, 2000

    Google Scholar 

  6. C. M. Perkin, Bayhr B. Triplett, Paul C. Mclntyre, Applied Physics Letter, 78, 16, 2001

    Article  Google Scholar 

  7. Cappelletti, Golla, Olivo, Zanoni, Flash Memories, (Kluwer Academic Publishers, 1999)

    Google Scholar 

  8. W. Zhu, T. P. Ma, T. Tamamagawa, Y. Di, J. Kim, R. Carruthers, M. Gibson, T. Furukawa, Electron Device Meeting, 2001 IEDM Technical Digest. International, pp. 20.4-10.4.4, 2001

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Dept. of Electronic Engineering City University of Hong Kong, Kowloon Tong, Hong Kong

    H. Wong

  2. Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong

    K. L. Ng, N. Zhan, M. C. Poon, C. W. Kok & M. Chan

Authors
  1. K. L. Ng
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. Zhan
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. C. Poon
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. C. W. Kok
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Chan
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. H. Wong
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ng, K.L., Zhan, N., Poon, M.C. et al. High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices. MRS Online Proceedings Library 716, 26 (2001). https://doi.org/10.1557/PROC-716-B2.6

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-716-B2.6

Search

Navigation