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Regrowth of Implanted-Amorphous Si

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Abstract

A two dimensional model of nucleation and growth is described which is consistent with the following experimental phenomena observed in the regrowth of ion-implanted silicon: (1) Substrate orientation effect on regrowth kinetics. (2) Impurity effects on regrowth kinetics. (3) The activation energy dependence of regrowth rate. (4) Impurity redistribution and supersaturation effect.

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Authors and Affiliations

  1. ARACOR, 1223E Arques Ave, Sunnyvale, CA, 94086, USA

    P. Ling

  2. Materials and Molecular Research Division, Lawrence Berkeley Laboratory and Department of Materials Science and Engineering, University of California, Berkeley, California, 94720, USA

    N. R. Wu & J. Washburn

Authors
  1. P. Ling
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  2. N. R. Wu
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  3. J. Washburn
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Ling, P., Wu, N.R. & Washburn, J. Regrowth of Implanted-Amorphous Si. MRS Online Proceedings Library 71, 179–182 (1986). https://doi.org/10.1557/PROC-71-179

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  • DOI: https://doi.org/10.1557/PROC-71-179

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