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Control of Nucleation to Realize High Density Si Nanoparticles on SiO2 Thin Films

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Abstract

A non-thermal method to facilitate nucleation for subsequent thermal chemical vapor deposition of Si nanoparticles on SiO2/Si(001) with high density and uniform size is demonstrated. Submonolayers of Si adatoms are predeposited on SiO2/Si(001) substrates by hot-wire chemical vapor deposition with disilane in an UHV chamber. The nanoparticles are grown with a disilane pressure of 1×10−4 Torr at 550 °C. The Si nanoparticles density is increased and size distribution is narrowed by predeposition of Si adatoms when compared to thermal growth on bare SiO2/Si(001). The nanoparticles density can be controlled by the amount of Si adatom predeposition. 1.2×1012 cm−2 density and 5.5 nm size are demonstrated on SiO2/Si(001) under UHV-CVD conditions.

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Authors and Affiliations

  1. Department of Chemical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA

    Jian-hong Zhu, W. Thomas Leach & John G. Ekerdt

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  1. Jian-hong Zhu
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  2. W. Thomas Leach
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  3. John G. Ekerdt
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Zhu, Jh., Leach, W.T. & Ekerdt, J.G. Control of Nucleation to Realize High Density Si Nanoparticles on SiO2 Thin Films. MRS Online Proceedings Library 704, 10101 (2001). https://doi.org/10.1557/PROC-704-W10.10.1

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  • DOI: https://doi.org/10.1557/PROC-704-W10.10.1

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