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Optoelectronic Properities of A-Ge:H/A-Si:H Superlattic Structures

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Abstract

The optoelectronic properties of multilayer a-Ge:H/a-Si:H superlattices with bandgaps between ∼ 1.4 and 1.1eV are presented. The dependence of the electronic properties on the band alignment and the layer thicknesses is established and quantified. Particular emphasis is given to properties relevant to practical device applications and which involve carrier transport perpendicular to the layers.

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Authors and Affiliations

  1. Exxon Research and Engineering Company, Clinton Township, Route 22, East Annandale, New Jersey, 08801, USA

    C. R. Wronski, P. D. Persans, B. Abeles, T. Tiedje & M. Hicks

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  1. C. R. Wronski
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  2. P. D. Persans
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  3. B. Abeles
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  4. T. Tiedje
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  5. M. Hicks
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Wronski, C.R., Persans, P.D., Abeles, B. et al. Optoelectronic Properities of A-Ge:H/A-Si:H Superlattic Structures. MRS Online Proceedings Library 70, 415–421 (1986). https://doi.org/10.1557/PROC-70-415

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  • DOI: https://doi.org/10.1557/PROC-70-415

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