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Lateral Growth of InN on GaN/Sapphire

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Abstract

The lateral growth of high quality InN on the stripe-pattern GaN/sapphire substrate with an OMVPE system was studied. The surface morphology and structural properties were investigated. Epitaxial films were achieved due to the greatly reduced strain by lateral growth. Two kinds of growth mode were observed due to different growth conditions of V/III ratios. X-ray rocking curve with FWHM of 700 arcsec shows the good quality of the film and E2 mode of Raman spectrum with FWHM of 3.5 cm−1 is among the best results ever reported in the literature.

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References

  1. T. L. Transley, C. P. Foley, J. Appl. Phys. 59 (1986) 3241.

    Article  Google Scholar 

  2. E. N. Matthias, B. M. Allen, IEEE Transactions on electron devices, ED–34 (1987) 257.

    Google Scholar 

  3. B. E. Foutz, S. K. O'Leary, M. S. Shur, L. F. Eastman, J. Appl. Phys. 85, 7727 (1999).

    Article  CAS  Google Scholar 

  4. A. Wakahara, T. Tsuchiya, A. Yoshida, J. Crystal Growth 99 (1990) 385.

    Article  CAS  Google Scholar 

  5. M. Sato, Jpn. J. Appl. Phys. 36 (1997) 595.

    Article  Google Scholar 

  6. Q. Guo, M. Nishio, H. Ogawa, A. Yoshida, Jpn. J. Appl. Phys. 38 (1999) L490.

    Article  CAS  Google Scholar 

  7. A. Yamamoto, Y. Yamauchi, M. Ohkubo, A. Hashimoto, J. Crystal Growth 174 (1997) 641.

    Article  CAS  Google Scholar 

  8. S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, I. Akasaki, J. Appl. Phys. 85 (1999) 7682.

    Article  CAS  Google Scholar 

  9. Y.C. Pan, W.H. Lee, C.K. Shu, H.C. Lin, C.I. Chiang, H. Chang, S.D. Lin, M.C. Lee, W.K. Chen, J. Appl. Phys. 38 (1999) 645.

    Article  CAS  Google Scholar 

  10. A. Yamamoto, M. Tsujino, M. Ohkubo, A. Hashimoto, J. of Crystal Growth 137 (1994) 415.

    Article  CAS  Google Scholar 

  11. S. E. Aleksandrov, V. A. Zykov, T. A. Gavrikova, D. M. Krasovitskii, Semiconductors 32 (1998) 412.

    Article  Google Scholar 

  12. C. R. Abernathy, S. J. Pearton, F. Ren, P. W. Wisk, J. Vac. Sci. Technol. B11 (1993) 179.

    Article  Google Scholar 

  13. T. J. Kistenmacher, S. A. Ecellberger, W. A. Bryden, J. Appl. Phys. 74 (1993) 1684.

    Article  CAS  Google Scholar 

  14. O. Igaracshi, Jpn. J. Appl. Phys. 31 (1992) 2665.

    Article  Google Scholar 

  15. P. Kung, D. Walker, M. Hamilton, J. Diaz, M. Razeghi, Appl. Phys. Lett. 74(1999) 570.

    Article  CAS  Google Scholar 

  16. J. S. Dyck, K. Kim, S. Limpijumnong, W.R.L. Lambrecht, K. Kash, J.C. Angus, Solid State Commun. 114 (2000) 335.

    Article  Google Scholar 

Download references

Acknowledgments

Financial support for this project from National Science Council, Taiwan is gratefully acknowledged. One of the authors (J. S. Huang) acknowledges the postdoctoral fellowship awarded by the Academia Sinica, Taiwan.

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Authors and Affiliations

  1. Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan

    Fuh-Hsiang Yang & Ying-Jay Yang

  2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan

    Jih-Hsien Hwang & Kuei-Hsien Chen

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  1. Fuh-Hsiang Yang
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  2. Jih-Hsien Hwang
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  3. Kuei-Hsien Chen
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  4. Ying-Jay Yang
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Yang, FH., Hwang, JH., Chen, KH. et al. Lateral Growth of InN on GaN/Sapphire. MRS Online Proceedings Library 693, 531–536 (2001). https://doi.org/10.1557/PROC-693-I3.54.1

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