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Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP

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Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700 °C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.

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Authors and Affiliations

  1. Department of Materials Science, University of Florida, Gainesville, FL, 32611, USA

    Gerald T. Thaler, Rachel M. Frazier, Brent P. Gila, Cammy R. Abernathy & Stephen J. Pearton

  2. Department of Physics, University of Florida, Gainesville, FL, 32611, USA

    Nikoleta A. Theodoropoulou, Stephen B. Arnason & Arthur F. Hebard

  3. Department of Physics, Seoul National University, Seoul, South Korea

    Yun D. Park

Authors
  1. Gerald T. Thaler
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  2. Rachel M. Frazier
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  3. Brent P. Gila
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  4. Cammy R. Abernathy
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  5. Stephen J. Pearton
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  6. Nikoleta A. Theodoropoulou
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  7. Stephen B. Arnason
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  8. Arthur F. Hebard
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  9. Yun D. Park
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Thaler, G.T., Frazier, R.M., Gila, B.P. et al. Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP. MRS Online Proceedings Library 690, F1.5 (2001). https://doi.org/10.1557/PROC-690-F1.5

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  • DOI: https://doi.org/10.1557/PROC-690-F1.5

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