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A New Double Laser Recrystallization Technique to Induce Ultra-Large Poly-Si Grains

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Abstract

A new double laser recrystallization technique that can produce lateral grains of tens of micrometers is presented. A nanosecond laser (excimer or Nd:YLF laser) and a pulse modulated Ar+ laser are used in the experiment. The effect of different parameters on lateral grain growth is investigated. These parameters include the time delay between the two lasers, the excimer laser fluence, the Ar+ laser power and the pulse duration. This process has wide process window and is insensitive to both the excimer laser fluence and the Ar+ laser power fluctuations. Preheating and melting of the a-Si film with the Ar+ laser before firing the excimer laser is found to be necessary for inducting lateral grain growth. The transient excimer laser irradiation is believed to generate nucleation sites for initiating the subsequent lateral grain growth. The solidification dynamics of the process is probed by high spatial and temporal resolution laser flash photography. A lateral solidification velocity of about 10 m/s is observed.

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References

  1. J.S. Im, R.S Sposili and MA. Crowder, Appl. Phys. Lett. 70, 3434 (1997).

    Article  CAS  Google Scholar 

  2. G. Aichmayr, D. Toet, M. Mulato, P.V. Santos, A. Spangenberg, S. Christiansen, M. Albrecht and H.P. Strunk, Phys. Status Solidi A 166, 659 (1998).

    Article  CAS  Google Scholar 

  3. R. Ishihara and M. Matsumura, Jpn. J. Appl. Phys. 36, 6167 (1997).

    Article  CAS  Google Scholar 

  4. G. Andrä, J. Bergmann, F. Falk and E. Ose, Applied Surface Science 154-5, 123 (2000).

    Article  Google Scholar 

  5. P. A. Stolk, A. Polman and W.C. Sinke, Phys. Rev. B 47, 5 (1993).

    Article  CAS  Google Scholar 

  6. M. D. Kluge and J. R. Ray, Phys. Rev. B 39, 1738 (1989).

    Article  CAS  Google Scholar 

  7. S. Moon, M. Lee, M. Hatano and C. P. Grigoropoulos, Microscale Thermophysical Engineering 4, 25 (2000).

    Article  CAS  Google Scholar 

  8. K. M. Shvarev, B. A. Baum and P. V. Gel’d, Sov. Phys. Solid State 16, 2111 (1975).

    Google Scholar 

  9. M. Hatano, S. Moon, M. Lee, K. Suzuki and C. P. Grigoropoulos, J. Appl. Phys. 87, 36 (2000).

    Article  CAS  Google Scholar 

  10. M. Lee, S. Moon, M. Hatano and C.P. Grigoropoulos, J. Appl. Phys. 88, 4994 (2000).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Mechanical Engineering, University of California, Berkeley, CA, 94720-1740, USA

    Minghong Lee, Seungjae Moon & Costas P. Grigoropoulos

  2. Hitachi Laboratory, Hitachi Ltd., Tokyo, 185-8601, Japan

    Mutsuko Hatano

Authors
  1. Minghong Lee
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  2. Seungjae Moon
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  3. Mutsuko Hatano
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  4. Costas P. Grigoropoulos
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Lee, M., Moon, S., Hatano, M. et al. A New Double Laser Recrystallization Technique to Induce Ultra-Large Poly-Si Grains. MRS Online Proceedings Library 685, 431 (2001). https://doi.org/10.1557/PROC-685-D4.3.1

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  • DOI: https://doi.org/10.1557/PROC-685-D4.3.1

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