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Electronic Properties of Bismuth Nanowires

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Abstract

The pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

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Authors and Affiliations

  1. Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    Stephen B. Cronin & Mildred S. Dresselhaus

  2. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    Yu-Ming Lin, Marcie R. Black & Mildred S. Dresselhaus

  3. Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    Oded Rabin

  4. Francis Bitter Magnet Laboratory Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    Gene Dresselhaus

Authors
  1. Stephen B. Cronin
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  2. Yu-Ming Lin
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  3. Oded Rabin
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  4. Marcie R. Black
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  5. Gene Dresselhaus
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  6. Mildred S. Dresselhaus
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Cronin, S.B., Lin, YM., Rabin, O. et al. Electronic Properties of Bismuth Nanowires. MRS Online Proceedings Library 679, 24 (2001). https://doi.org/10.1557/PROC-679-B2.4

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  • DOI: https://doi.org/10.1557/PROC-679-B2.4

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