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Photoluminescence Studies of p-type GaN∶Mg Co-doped with Oxygen

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Abstract

The low temperature photoluminescence (PL) of Mg-doped GaN co-doped with oxygen is investigated. Two PL bands are observed at low temperature at 2.5 and 2.8 eV in the p-type oxygen co-doped samples. Both the 2.5 eV and 2.8 eV bands are attributed to donor-acceptor (DA) transitions involving deep donors of different origin and a shallow MgGa acceptor. The integrated intensity of the 2.8 eV band in p-type GaN decreases as the oxygen partial pressure is increased. The decrease is attributed to reduced compensation by deep native donors. The two bands are not formed in n-type (n > 1019 cm−3) GaN:Mg over-doped with oxygen indicating that the deep donors responsible for these transitions have high formation energies in n-type material.

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  1. Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA

    R. Y. Korotkov, J. M. Gregie & B. W. Wessels

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  1. R. Y. Korotkov
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  2. J. M. Gregie
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  3. B. W. Wessels
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Korotkov, R.Y., Gregie, J.M. & Wessels, B.W. Photoluminescence Studies of p-type GaN∶Mg Co-doped with Oxygen. MRS Online Proceedings Library 639, 639 (2000). https://doi.org/10.1557/PROC-639-G6.39

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  • DOI: https://doi.org/10.1557/PROC-639-G6.39

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