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Transport Properties of Bi-related Nanowire Systems

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Abstract

We present here an electrical transport property study of Te-doped Bi nanowires, and Bi1−xSbx alloy nanowires embedded in a dielectric matrix. The crystal structure of the nanowires were characterized by X-ray diffraction measurements, indicating that the nanowires possess the same lattice structure as bulk Bi in the presence of a small amount of Te or Sb atoms. The resistance measurements of 40-nm Te-doped Bi nanowires were performed over a wide range of temperature (2 K≤ T ≤ 300 K), and the results are consistent with theoretical predictions. The 1D-to-3D localization transition and the boundary scattering effect are both observed in magneto-resistance measurements of Bi1−xSbx alloy nanowires at low temperatures (T < 4 K).

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    Y. M. Lin & M. S. Dresselhaus

  2. Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    S. B. Cronin & M. S. Dresselhaus

  3. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    J. Y. Ying

  4. Delphi Research Labs, Delphi Automotive Systems, Warren, MI, 48090, USA

    J. Heremans

  5. Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    M. S. Dresselhaus

Authors
  1. Y. M. Lin
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  2. S. B. Cronin
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  3. J. Y. Ying
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  4. J. Heremans
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  5. M. S. Dresselhaus
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Lin, Y.M., Cronin, S.B., Ying, J.Y. et al. Transport Properties of Bi-related Nanowire Systems. MRS Online Proceedings Library 635, C4.30 (2000). https://doi.org/10.1557/PROC-635-C4.30

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  • DOI: https://doi.org/10.1557/PROC-635-C4.30

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