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Dislocations Produced by Indentation Deformation of HPVE GaN Films

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Abstract

Vickers hardness tests on {0001} and (112̄0) faces of a relatively thick GaN film grown on a (0001) sapphire substrate have been performed in the temperature range 25-1200°C. The microstructure of the plastic zone around the indentation sites has been investigated by transmission electron microscopy (TEM). At room temperature, the hardness was measured to be 12.3 GPa on the basal plane, and 11.1 GPa on the prism plane. The hardness decreases gradually with increasing temperature up to ≈800°C and then shows a plateau between ≈800 and ≈1050°C after which it decreases again above ≈1100°C. In contrast to the rather straight dislocations produced by room-temperature indentation of the (0001) face, the dislocations generated by indenting the (112̄0) face at room temperature were curved and in the shape of half-loops emanating from the indentation sites on the prism planes. Such dislocations were not dissociated within the resolution of weak-beam TEM.

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References

  1. S. Nakamura and G. Fasol, The Blue Laser Diode (Berlin-Heidelberg: Springer, 1997).

    Book  Google Scholar 

  2. J. T. Torvik, J. I. Pankove, S. Nakamura, I. Grzegory and S. Porowski, J. Appl. Phys. 86(8), 4588–4593 (1999).

    Article  CAS  Google Scholar 

  3. M. H. Hong, A. V. Samant, V. Orlov, B. Farber, C. Kisielowski and P. Pirouz, Mat. Res. Soc. Symp. Proc. 572, 369–375 (1999).

    Article  CAS  Google Scholar 

  4. M. D. Drory, J. W. Ager Jr., T. Suski, I. Grzegory and S. Porowski, Appl. Phys. Lett. 69(26), 4044–4046 (1996).

    Article  Google Scholar 

  5. I. Yonenaga, T. Hoshi and A. Usui, Jpn. J. Appl. Phys. 39(3A/B), L200–L201 (2000).

    Article  CAS  Google Scholar 

  6. G. R. Anstis, P. Chantikul, B. R. Lawn and D. B. Marshall, J. Am. Ceram. Soc. 64(9), 533–538 (1981).

    Article  CAS  Google Scholar 

  7. R. Nowak, M. Pessa, M. Suganuma, M. Leszczynski, I. Grzegory, S. Porowski and F. Yoshida, Appl. Phys. Lett. 75(14), 2070–2072 (1999).

    Article  CAS  Google Scholar 

  8. P. Pirouz, Extended Defects in SiC and GaN Semiconductors, Materials Science Forum 264–268, pp. 399–408 (1998).

    Article  Google Scholar 

  9. S. Takeuchi and K. Suzuki, Phil. Mag. Letts. 79(7), 423–428 (1999).

    Article  Google Scholar 

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Authors and Affiliations

  1. Department of Materials Science and Engineering, CWRU, Cleveland, OH, 44106-7204, USA

    M. H. Hong & P. Pirouz

  2. Department of Materials, University of California - Santa Barbara, CA, 93106-5050, USA

    P. M. Tavernier & D. R. Clarke

Authors
  1. M. H. Hong
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  2. P. Pirouz
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  3. P. M. Tavernier
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  4. D. R. Clarke
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Hong, M.H., Pirouz, P., Tavernier, P.M. et al. Dislocations Produced by Indentation Deformation of HPVE GaN Films. MRS Online Proceedings Library 622, 6181 (2000). https://doi.org/10.1557/PROC-622-T6.18.1

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  • DOI: https://doi.org/10.1557/PROC-622-T6.18.1

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