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Strong Photon-Exciton Coupling in the Near-Field Luminescence of Semiconductor Quantum Dots

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Abstract

We present low-temperature near-field scanning optical microscopy (NSOM) measurements of self-organized InP quantum dots (QD) embedded in a GaInP layer. We observed an anomalously strong increase in the emission energy (∼270 meV) of a single QD by changing the tip-to-surface distance over ∼100 nm in the near-field region. The effect indicates the formation of a near-field nanocavity having extremely high photon-exciton mixing and can be interpreted as the observation of the coupled photon-exciton pair

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Authors and Affiliations

  1. EE Department, University of Notre Dame, Notre Dame, IN, 46556, USA

    A. M. Mintairov, A. S. Vlasov, J. L. Merz & J. P. Reynolds

  2. Ioffe Physico-Technical Institute, RAS, 194021, St. Petersburg, Russia

    O. V. Kovalenkov & D. A. Vinokurov

Authors
  1. A. M. Mintairov
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  2. A. S. Vlasov
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  3. J. L. Merz
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  4. O. V. Kovalenkov
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  5. J. P. Reynolds
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  6. D. A. Vinokurov
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Mintairov, A.M., Vlasov, A.S., Merz, J.L. et al. Strong Photon-Exciton Coupling in the Near-Field Luminescence of Semiconductor Quantum Dots. MRS Online Proceedings Library 618, 207 (2000). https://doi.org/10.1557/PROC-618-207

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  • DOI: https://doi.org/10.1557/PROC-618-207

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