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Dielectric Properties of Highly Oriented Lead Zirconium Titanate Thin Films Prepared by Reactive RF-Sputtering

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Abstract

Highly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.

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Authors and Affiliations

  1. International Center for Actuators and Transducers, Materials Research Laboratory, The Pennsylvania State University, University Park, Pa, 16802, USA

    S. Kalpat, X. Du, S. Trolier McKnistry & K. Uchino

  2. Institute of Materials Research and Engineering, Kent Ridge, 119260, Singapore

    I. R. Abothu

  3. OMRON Corporation, Tsukuba city, IbarakiPref, 300-4247, Japan

    A. Akiba & H. Goto

Authors
  1. S. Kalpat
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  2. X. Du
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  3. I. R. Abothu
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  4. A. Akiba
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  5. H. Goto
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  6. S. Trolier McKnistry
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  7. K. Uchino
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Kalpat, S., Du, X., Abothu, I.R. et al. Dielectric Properties of Highly Oriented Lead Zirconium Titanate Thin Films Prepared by Reactive RF-Sputtering. MRS Online Proceedings Library 604, 3–8 (1999). https://doi.org/10.1557/PROC-604-3

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  • DOI: https://doi.org/10.1557/PROC-604-3

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