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MOVPE Growth of Quaternary (Al, Ga, In)N for UV Optoelectronics

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Abstract

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

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Authors and Affiliations

  1. Sandia National Laboratories, Albuquerque, NM, 87185, USA

    Jung Han, Jeffrey J. Figiel, Gary A. Petersen, Samuel M. Myers, Mary H. Crawford, Michael A. Banas & Sean J. Hearne

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  1. Jung Han
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  2. Jeffrey J. Figiel
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  3. Gary A. Petersen
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  4. Samuel M. Myers
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  5. Mary H. Crawford
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  6. Michael A. Banas
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  7. Sean J. Hearne
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Correspondence to Jung Han.

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Han, J., Figiel, J.J., Petersen, G.A. et al. MOVPE Growth of Quaternary (Al, Ga, In)N for UV Optoelectronics. MRS Online Proceedings Library 595, 62 (1999). https://doi.org/10.1557/PROC-595-F99W6.2

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  • DOI: https://doi.org/10.1557/PROC-595-F99W6.2

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