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Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam

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Abstract

In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 μm thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10° toward the m-plane (1010).

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Authors and Affiliations

  1. Dept. Physics and Applied Physics, University of Strathclyde, Glasgow, G4 0NG, UK

    Carol Trager-Cowan, D. McColl, F. Sweeney, S. T. F. Grimson, J. F. Treguer, A. Mohammed, P. G. Middleton, S. K. Manson-Smith & K. P. O’Donnell

  2. IMEC-INTEC, University of Gent, Gent, 9000, Belgium

    W. Van der Stricht, I. Moerman & P. Demeester

  3. KULeuven, Leuven, Belgium

    M. F. Wu & A. Vantomme

  4. Center for High Technology Materials, University of New Mexico, 1313 Goddard, SE Albuquerque, NM, USA

    D. Zubia & S. D. Hersee

Authors
  1. Carol Trager-Cowan
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  2. D. McColl
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  3. F. Sweeney
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  4. S. T. F. Grimson
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  5. J. F. Treguer
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  6. A. Mohammed
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  7. P. G. Middleton
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  8. S. K. Manson-Smith
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  9. K. P. O’Donnell
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  10. W. Van der Stricht
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  11. I. Moerman
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  12. P. Demeester
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  13. M. F. Wu
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  14. A. Vantomme
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  15. D. Zubia
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  16. S. D. Hersee
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Trager-Cowan, C., McColl, D., Sweeney, F. et al. Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam. MRS Online Proceedings Library 595, 510 (1999). https://doi.org/10.1557/PROC-595-F99W5.10

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  • DOI: https://doi.org/10.1557/PROC-595-F99W5.10

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