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High-Gain, High-Speed ZnO MSM Ultraviolet Photodetectors

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Abstract

High quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range 350-600°C. In-situ nitrogen compensation doping was performed using NH3. The metalsemiconductor-metal ultraviolet-sensitive photodetectors were fabricated on nitrogencompensation-doped epitaxial ZnO films. The photoresponsivity of these devices exhibits a linear dependence upon bias voltage up to 10 V, with a photoresponsivity of 400 A/W at 5 V. The rise and fall times are 1 and 1.5 μs, respectively.

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Authors and Affiliations

  1. US Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, Adelphi, MD, 20783, USA

    H. Shen & M. Wraback

  2. Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ, 08854, USA

    C. R. Gorla, S. Liang, N. Emanetoglu, Y. Liu & Y. Lu

Authors
  1. H. Shen
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  2. M. Wraback
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  3. C. R. Gorla
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  4. S. Liang
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  5. N. Emanetoglu
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  6. Y. Liu
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  7. Y. Lu
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Shen, H., Wraback, M., Gorla, C.R. et al. High-Gain, High-Speed ZnO MSM Ultraviolet Photodetectors. MRS Online Proceedings Library 595, 1116 (1999). https://doi.org/10.1557/PROC-595-F99W11.16

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  • DOI: https://doi.org/10.1557/PROC-595-F99W11.16

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