Abstract
We report measurements of the distribution of Sb atoms in δ-doped Si, over a wide 2-D concentration range. Both annular dark-field imaging and electron energy loss spectroscopy proved sufficiently sensitive to locate Sb atoms at the atomic scale. Improvements in both detector sensitivities and specimen preparation were necessary to achieve these results, which offer a surprising explanation for the dramatic difference in electrical activity between 2-D and 3D dopant distributions at the same effective volume concentrations. The prospects for the general identification of individual dopant atoms will be discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H.-J. Gossmann and E.F. Schubert, Critical Reviews in Solid State and Materials Sciences, 18, 1–67 (1993).
P.H. Citrin, D.A. Muller, H.J. Gossmann, R. Vanfleet, and P.A. Northrup, Phys. Rev. Lett. 83, 3234 (1999).
E. J. Kirkland, M. Thomas, A High Efficiency Annular Dark Detector for a VG HB-501 STEM, Ultramicroscopy, 62 (1996) 79–88.
S.J. Klepeis, J.P. Benedict, and R.M. Anderson in Specimen Preparation for Transmission Electron Microscopy, Edited by J.C. Bravman, R. Anderson, and M.L. McDonald (Mater. Res. Soc. Proc. 115, Pittsburgh, PA 1988), p. 179.
R.R. Vanfleet, M. Robertson, M. McKay, and J. Silcox, Prospects for Single Atom Sensitivity Measurements of Dopant Levels in Silicon, in “Characterization and Metrology for ULSI Technology: 1998 International Conference” edited by D.G. Seiler, A.C. Diebold, W.M. Bullis, T.J. Shaffner, R. McDonald, and E.J. Walters, (AIP press, 1998).
Calculated with data in: Electron Energy-Loss Spectroscopy in the Electron Microscope, R.F. Egerton, Plenum Press, New York 1996.
Acknowledgments
Support was received from Lucent Technologies and Air Force grant # F49620-95-1-0427. The Cornell STEM was acquired through the NSF (grant # DMR-8314255) and is operated by the Cornell Center for Materials Research (NSF grant # DMR-9632275). Support and helpful discussions with Earl Kirkland and Mick Thomas are gratefully acknowledged.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Vanfleet, R., Muller, D.A., Gossmann, H.J. et al. Atomic-Scale Imaging of Dopant Atom Distributions within Silicon δ-Doped Layers. MRS Online Proceedings Library 589, 173 (1999). https://doi.org/10.1557/PROC-589-173
Published:
DOI: https://doi.org/10.1557/PROC-589-173